TLP180 2002-09-25 1 toshiba photocoupler gaas ired & photo ? transistor TLP180 programmable controllers ac / dc ? input module telecommunication the toshiba mini flat coupler tlp 1 80 is a small outline coupler, suitable for surface mount assembly. tlp 1 80 consist of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly by ac input current. collector ? emitter voltage: 80 v (min.) current transfer ratio: 50% (min.) rank gb: 1 00% (min.) isolation voltage: 3750vrms (min.) ul recognized: ul 1 577, file no. e67349 pin configuration (top view) 6 1: anode, cathode 3: cathode, anode 4: emitter 6: collector 4 1 3 toshiba 11 ? 4c1 weight: 0.09 g unit in mm
TLP180 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f(rms) 50 ma forward current detating (ta 53c) ? i f / c 0.7 ma / c pulse forward current (note1) i fp 1 a led junction temperature t j 125 c collector emitter voltage v ceo 80 v emitter collector voltage v eco 7 v collector current i c 50 ma power dissipation p c 150 mw power dissipation derating (ta 25c) ? p c / c 1.5 mw / c detector junction temperature t j 125 c storage temperature range t stg 55~125 c operating temperature range t opr 55~100 c lead soldering temperature(10s) t sol 260 c total package power dissipation p t 200 mw total package power dissipation derating (ta 25c) ? p t / c 2.0 mw / c isolation voltage (ac,1min.,r.h. 60%) (note 2) bv s 3750 vrms note 1: pulse width 100s,f=100hz note 2: device considered a two terminal device: pins 1 and 3 shorted together and 4 and 6 shorted together. recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v cc D 5 48 v forward current i f(rms) D 16 20 ma collector current ic D 1 10 ma operating temperature t opr 25 D 85 c
TLP180 2002-09-25 3 electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma 1.0 1.15 1.3 v led capacitance c t v = 0, f = 1 mhz D 60 D pf collector emitter breakdown voltage v (br) ceo i c = 0.5 ma 80 D D v emitter collector breakdown voltage v (br) eco i e = 0.1 ma 7 D D v v ce = 48 v (ambient light below 1000lx) (note3) D 0.01 (2) 0.1 (10) a collector dark current i ceo v ce = 48 v (ambient light ta = 85c below 1000lx) (note3) D 2 (4) 50 (50) a detector capacitance (collector to emitter) c ce v = 0, f = 1 mhz D 10 D pf note 3: please use standard electric lamp to light up the device's marking surface. coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit 50 ? 600 current transfer ratio i c / i f i f = 5 ma, v ce = 5 v rank gb 100 ? 600 % ? 60 ? saturated ctr i c / i f (sat) if = 1 ma, v ce = 0.4 v rank gb 30 ? ? % i c = 2.4 ma, i f = 8 ma ? ? 0.4 ? 0.2 ? collector emitter saturation voltage v ce (sat) i c = 0.2 ma, i f = 1 ma rank gb ? ? 0.4 v off state collector current i c(off) v f = 0.7v, v ce = 48 v ? 1 10 a ctr symmetry i c (ratio) i c (i f = 5ma) / i c (i f = 5ma) (note4) 0.33 1 3 ? note 4 : i c (ratio)= 5v) ce v , f1 i f (i c1 i 5v) ce v , f2 i f (i c2 i i c1 i c2 v ce i f1 i f2
TLP180 2002-09-25 4 isolation characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit capacitance input to output c s v s = 0v, f = 1 mhz D 0.8 D pf isolation resistance r s v s = 500 v, r.h. 60% 510 10 10 14 D ? ac, 1 minute 3750 D D ac, 1 second, in oil D 10000 D v rms isolation voltage bv s dc, 1 minute, in oil D 10000 D v dc swiching characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit rise time t r D 2 D fall time t f D 3 D turn on time t on D 3 D turn off time t off v cc = 10 v, i c = 2 ma r l = 100 ? D 3 D s turn on time t on D 2 D storage time t s D 25 D turn off time t off r l = 1.9 k ? (fig.1) v cc = 5 v, i f = 16 ma D 40 D s fig. 1: switching time test circuit t off t on v ce i f t s v cc 4.5v 0.5v v cc r l i f v ce
TLP180 2002-09-25 5 p c ? ta 200 20 0 20 40 60 80 100 120 160 120 80 40 0 allowable collector power dissipation p c (mw) ambient temperature ta (c) i fp ? d r duty cycle ratio d r pulse forward current i fp (ma) 3000 10 3 pulse width 100s ta = 25c 10 3 3 10 2 3 10 ? 1 3 10 0 30 50 100 300 1000 500 ? v f / ? ta ? i f forward current i f (ma) forward voltage temperature coefficient ? v f / ? ta ( mv / c) 3.2 0.4 0.1 2.8 2.4 2.0 1.6 1.2 0.8 0.3 0.5 1 3 5 10 30 50 i fp ? v fp pulse forward voltage v fp (v) 1000 1 0.6 500 300 100 50 30 10 5 3 1.0 1.4 1.8 2.2 2.6 3.0 pulse width 10s repetitive frequency = 100hz ta = 25c pulse forward current i fp (ma) i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 100 20 80 60 40 20 0 0 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) 100 0.001 0 10 1 0.1 0.01 0.4 0.8 1.2 1.6 2 25c 85c 25 c 25 c
TLP180 2002-09-25 6 collector current i c (ma) i c ? v ce 50 0 collector-emitter voltage v ce (v) 0 40 30 20 10 2 4 6 8 10 50ma 30 m a 20ma 15m a 1 0 m a p c (max.) i f = 5ma ta = 25c collector-emitter voltage v ce (v) forward current i f (ma) i c / i f ? i f current transfer ratio i c / i f (%) 1000 10 0.1 0.3 0.5 1 3 5 10 30 50 30 50 100 300 500 v ce = 10v v ce = 5v v ce = 0.4v ta = 25c sample b sample a collector dark current i d(i ceo ) (a) i ceo ? ta ambient temperature ta (c) 0 10 1 v ce = 48 v 5v 10v 24v 20 40 60 80 100 10 0 10 1 10 2 10 3 10 4 i c ? i f forward current i f (ma) collector current i c (ma) 0.1 0.1 0.3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 sample a sample b ta = 25c v ce = 10v v ce = 5v v ce = 0.4v i c ? v ce 30 0 0 1.0 0.2 0.4 0.6 0.8 20 10 collector current i c (ma) 50ma ta = 25c 40ma 30ma 20ma 10ma 5ma 2ma
TLP180 2002-09-25 7 v ce(sat) ? ta ambient temperature ta (c) collector-emitter saturation voltage v ce(sat) (v) 0.24 0 40 0.20 0.12 0.08 0.04 20 0 40 80 100 20 60 0.16 i f = 5ma, i c = 1ma i f = 1ma, i c = 0.2ma i f = 1ma i c = 0.2ma i c ? ta collector current ic (ma) 100 1 20 100 0 20 40 80 30 5 60 0.1 0.3 0.5 3 10 50 v ce = 5v 1m a 0.5ma 5ma 10ma i f = 25m a ambient temperature ta (c) switching time ? r l load resistance r l (k ? ) 1 10 30 50 100 300 500 1000 3 5 30 50 switching time (s) 5 3 1 ta = 25c i f = 16ma v cc = 5v t off t s t on 100 10 switching time (s) switching time ? ta 0 160 20 20 40 60 80 ambient temperature ta (c) 30 10 1 0.5 0.1 100 0.3 3 5 50 t off t s t on i f = 16ma v cc = 5v rl = 1.9k ?
TLP180 2002-09-25 8 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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